Chemosynthesis and physical vapor deposition of acanthite thin films: Characterization and electrochemistry explorationwe
By Ahmad, Khuram Shahzad; Zafar, Aimen; Jaffri, Shaan Bibi; Alamgir, Muhammad Khalid; Sohail, Manzar; Mehmood, Rana Farhat; Rehman, Misbah ur; Ali, Daoud
Published in Results in Physics
Results in Physics
2020
Abstract
Current work reports the diethyl-ammonium dithiocarbamate based metallic chalcogenide semiconductor complexes of Ag2S-(dtc)2 [where dtc = dithiocarbamate], BaS-(dtc)2 and Ba:Ag2S-(dtc)2 in an in situ chemosynthetic route for first time. Current work is also the first investigation reporting the physical vapor deposition of pristine [Ag2S-(dtc)2]/SnO2 and doped [Ba:Ag2S-(dtc)2]/SnO2 thin films was carried out in a resistive heating unit. Synthesized complexes and thin films expressed remarkable crystalline, vibrational, optical, morphological and elemental compositional characteristics revealed from different analytical tools. X-ray diffraction disclosed the acanthite type orientation for the pristine and doped thin films with average crystallite sizes of 43.23 and 38.11 nm, respectively. Fourier transform infra-red spectroscopy supported a myriad of functional groups, bond types and molecular arrangements in the single source precursor synthesized complexes. The optical analysis via ultra-violet visible spectrophotometry expressed an alleviation in the both direct and indirect bandgaps from 3.9 to 3.7 eV and 3.8 to 2.7 eV determined from Tauc